Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI3443BDV-T1-GE3 (VISHAY) | 2400 | 35.74 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.7A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
| Power - Max | 1.1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-TSOP (0.065", 1.65mm Width) |
| Корпус | 6-TSOP |
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