Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFPE50 | 161 | 191.23 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 4.7A, 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 7.8A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 200nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3100pF @ 25V |
| Power - Max | 190W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 |
| Корпус | TO-247-3 |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BC847B (NEXPERIA) | 30149 | 2.42 руб. | |
| IRFP460 | 6 | 444.00 руб. | |
| IRFP460 | 6 | 444.00 руб. | |
| LM2576HVT-ADJ (HTC TAEJIN) | 240 | 148.78 руб. | |
| UC3842AN (ON SEMICONDUCTOR) | 80 | 64.65 руб. | |
|
IRFPE50 N-канальные транзисторные модули Power Mosfet (vdss=800v, Rds (on) =1.2ohm, Id=7.8a)
Производитель:
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