Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFPE50 | 238 | 188.09 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 4.7A, 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 7.8A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 200nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3100pF @ 25V |
| Power - Max | 190W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 |
| Корпус | TO-247-3 |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BC847B (NEXPERIA) | 66240 | 2.63 руб. | |
| BC857B (YJ) | 88000 | 1.24 руб. | |
| LL4148 (VISHAY) | 797595 | 2.33 руб. | |
| LM2576HVT-ADJ (HTC TAEJIN) | 240 | 185.98 руб. | |
| UC3842AN (ON SEMICONDUCTOR) | 80 | 58.97 руб. | |
|
IRFPE50 N-канальные транзисторные модули Power Mosfet (vdss=800v, Rds (on) =1.2ohm, Id=7.8a)
Производитель:
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