Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF5210PBF | 1704 | 102.44 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 24A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 40A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2700pF @ 25V |
| Power - Max | 200W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| EPM3128ATC100-10N (ALTERA) | 2 | 794.22 руб. | |
| SN74HC00N | 52 | 90.77 руб. | |
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| VS-30BQ040-M3/9AT | 2096 | 24.90 руб. | |