Наименование |
Кол-во
|
Цена
|
|---|---|---|
| MMBT5401LT1G (ON SEMICONDUCTOR) | 4 | 3.19 |
Индексы в названии
1 = 3000 Tape & Reel
3 = 10,000 Tape & Reel
G = (Pb−Free)
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Power - Max | 225mW |
| Frequency - Transition | 300MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |