Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| MJE2955T (ST MICROELECTRONICS) | 40 | 58.97 руб. | |
Параметр |
Значение |
|---|---|
| Current - Collector (Ic) (Max) | 10A |
| Transistor Type | PNP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Power - Max | 75W |
| Frequency - Transition | 2MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 1N5359B | 4640 | 7.26 руб. | |
| BYS10-45-E3/TR (VISHAY) | 2960 | 10.21 руб. | |
|
UTCMJE2955T Биполярные транзисторы PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE
Производитель:
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