Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI7997DP-T1-GE3 (VISHAY) | 400 | 210.77 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 20A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 6200pF @ 15V |
| Power - Max | 46W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® SO-8 Dual |
| Корпус | PowerPAK® SO-8 Dual |
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