Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFR1018EPBF (INFINEON) | 2400 | 173.58 руб. | |
Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 47A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 79A |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) @ Vgs | 69nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2290pF @ 50V |
| Power - Max | 110W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| FQPF6N90C (ONS) | 152 | 340.30 руб. | |
| MBR230LSFT1G (ONS) | 2658 | 22.79 руб. | |
| STM32F303CBT6TR (ST MICROELECTRONICS) | 25 | 369.79 руб. | |
|
IRFR1018EPBF MOSFET HEXFET Power MOSFETs Discrete N-Channel
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