Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 960mA, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 570pF @ 25V |
| Power - Max | 1.3W |
| Тип монтажа | Выводной |
| Корпус (размер) | 4-DIP (0.300", 7.62mm) |
| Корпус | 4-DIP, Hexdip, HVMDIP |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 2N5551 | 21360 | 1.27 руб. | |
| 3590S-2 10 КОМ | 896 | 246.79 руб. | |
|
IRFD9024PBF MOSFET HEXFET® Power MOSFET
Производитель:
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