Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 3.9A, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 6.5A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 700pF @ 25V |
| Power - Max | 74W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 1206-Y5V-0.22МКФ50В-20%+80% (SAMSUNG) | 800 | 6.80 руб. | |
|
IRF9630PBF MOSFET HEXFET® Power MOSFET
Производитель:
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