Наименование  | 
                                    
                                         Кол-во 
                                     | 
                                    
                                         Цена 
                                     | 
                                
|---|---|---|
| MMBT5551 (YJ) | 75200 | 1.24 | 
Параметр  | 
                                    Значение  | 
                                
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | 
| Transistor Type | NPN | 
| Current - Collector (Ic) (Max) | 600mA | 
| Voltage - Collector Emitter Breakdown (Max) | 160V | 
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | 
| Power - Max | 350mW | 
| Frequency - Transition | 100MHz | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 | 
| Корпус | SOT-23 | 
| Product Change Notification | Mold Compound Change 12/Dec/2007 |