Параметр |
Значение |
|---|---|
| Input Capacitance (Ciss) @ Vds | 1543pF @ 25V |
| Gate Charge (Qg) @ Vgs | 16nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 11A, 20V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Power - Max | 2.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-PowerVQFN |
| Корпус | PQFN (3x3) |