Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFB4110PBF | 320 | 73.79 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 9620pF @ 50V |
| Power - Max | 370W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SK16 | 20000 | 1.63 руб. | |
| SN74LVC1G3157DBVR | 8864 | 5.80 руб. | |
| TECAP 22/16V B 20 (TCSCS1C226MBAR) (SAMSUNG) | 654 | 12.60 руб. | |
|
IRFB4110PBF MOSFET HEXFET Power MOSFETs Discrete N-Channel
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