Параметр |
Значение |
|---|---|
| Input Capacitance (Ciss) @ Vds | 9400pF @ 50V |
| Gate Charge (Qg) @ Vgs | 220nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Drain to Source Voltage (Vdss) | 75V |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 75A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Power - Max | 370W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
|
IRFB3077PBF Мощные полевые МОП транзисторы High Efficiency Synchronous Rectification In Smps
Производитель:
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