Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF5210PBF | 1245 | 102.82 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 24A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 40A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2700pF @ 25V |
| Power - Max | 200W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 42100-2 (TE CONNECTIVITY) | 5680 | 17.36 руб. | |
| BCP69 (FAIRCHILD) | 40 | 7.56 руб. | |
| G6A-274P-ST-US24DC (OMRON ELECTRONIC COMPONENTS) | 200 | 344.97 руб. | |
| IRFP064N | 676 | 129.29 руб. | |
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