Наименование  | 
                                    
                                         Кол-во 
                                     | 
                                    
                                         Цена 
                                     | 
                                
|---|---|---|
| BSP89 E6327 | 13168 | 
                                                                                             
                                                                                                 | 
                                    
Параметр  | 
                                    Значение  | 
                                
|---|---|
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | 
| Серия | SIPMOS® | 
| FET Type | MOSFET N-Channel, Metal Oxide | 
| FET Feature | Logic Level Gate | 
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 350mA, 10V | 
| Drain to Source Voltage (Vdss) | 240V | 
| Current - Continuous Drain (Id) @ 25° C | 350mA | 
| Vgs(th) (Max) @ Id | 1.8V @ 108µA | 
| Gate Charge (Qg) @ Vgs | 6.4nC @ 10V | 
| Input Capacitance (Ciss) @ Vds | 140pF @ 25V | 
| Power - Max | 1.8W | 
| Тип монтажа | Поверхностный | 
| Корпус (размер) | TO-261-4, TO-261AA | 
| Корпус | PG-SOT223-4 |