Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF1018EPBF (INFINEON) | 5201 | 116.96 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 47A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 79A |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) @ Vgs | 69nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2290pF @ 50V |
| Power - Max | 110W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 1N5822 (LGE) | 4960 | 7.44 руб. | |
| STP16NF06 (ST MICROELECTRONICS) | 157 | 135.06 руб. | |
| TPSA106K010R1800 (KYOCERA-AVX) | 857 | 28.30 руб. | |
|
IRF1018EPBF MOSFET HEXFET Power MOSFETs Discrete N-Channel
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