Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 650MHz |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Possible Adhesion Issue 11/July/2008 |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BAS16HT1G (ON SEMICONDUCTOR) | 67200 | 2.02 руб. | |
| GS1M (YJ) | 104000 | 1.24 руб. | |
| MMBTA92LT1G (ONS) | 1760 | 9.92 руб. | |
|
MMBTH10LT1G VHF / UHF Transistor NPN Silicon
Производитель:
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