Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 2.2A, 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
| Power - Max | 74W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BYV26C-TAP | 1248 | 37.74 руб. | |
| UC3842BD1 (ST MICROELECTRONICS) | 800 | 58.97 руб. | |
| ОТСОС ПРИПОЯ TD-192В | 286 | 262.34 руб. | |
|
IRFBC30 N - Channel Powermesh Mosfet
Производитель:
|
||
 |
 |
 |
 |
 |
 |
