Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI2309CDS-T1-GE3 (VISHAY) | 432 | 29.76 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 345 mOhm @ 1.25A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 4.1nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 210pF @ 30V |
| Power - Max | 1.7W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 (TO-236) |
 |
 |
 |
 |
 |
 |