Параметр |
Значение |
|---|---|
| Серия | STripFET™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 2A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1030pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
|
STS4DNF60L MOSFET N-channel 60V - 0.045? - 4A - SO-8 STripFET™ Power MOSFET
Производитель:
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