Параметр |
Значение |
---|---|
Current - Continuous Drain (Id) @ 25° C | 1.2A |
Drain to Source Voltage (Vdss) | 20V |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 930mA, 4.5V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) @ Vgs | 3.9nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 110pF @ 15V |
Power - Max | 540mW |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | Micro3™/SOT-23 |
Наименование |
Кол-во
|
Цена
|
|
---|---|---|---|
2N7002 (DIOTEC) | 87291 | 6.16 руб. | |
BC847A (HOTTECH) | 14392 | 1.96 руб. (от 100 шт. 0.98 руб.) | |
IRLML6402TR | 1183 | 29.57 руб. | |