Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 3dB @ 1GHz ~ 4GHz |
| Gain | 10dB ~ 18.5dB |
| Power - Max | 500mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 8V |
| Current - Collector (Ic) (Max) | 60mA |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 4-SMD (35 micro-X) |
| Корпус | 35 micro-X |
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