Параметр |
Значение |
|---|---|
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.9A, 10V |
| FET Feature | Standard |
| FET Type | N and P-Channel |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.9A, 3.5A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 235pF @ 10V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | SO-8 |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
|
SI4532DY Импульсные полевые канальные транзисторы Dual N- and P-channel Enhancement Mode Field Effect Transistor
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