Параметр |
Значение |
|---|---|
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 960pF @ 10V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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