Параметр |
Значение |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 73 mOhm @ 2.2A, 10V |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
|
IRF7380 Дискретные сигналы High Frequency Dc-dc Converters
Производитель:
|
||
 |
 |
 |
 |
 |
 |
