Параметр |
Значение |
|---|---|
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 3.4A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 690pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
|
IRF7342D2 Дискретные сигналы FETKY MOSFET and Schottky Diode
Производитель:
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