Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | PowerTrench® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 4.7A, 10V |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 4.7A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1180pF @ 40V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | SO-8 |
| Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
|
FDS3890 MOSFET 80V N-Channel Dual PowerTrench MOSFET
Производитель:
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