Наименование |
Кол-во
|
Цена
|
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|---|---|---|---|
| IRLR8103V | 18 | 92.93 руб. | |
Параметр |
Значение |
|---|---|
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 15A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 91A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 27nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 2672pF @ 16V |
| Power - Max | 115W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
|
IRLR8103V N-channel Application-specific Mosfets
Производитель:
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