Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRLML0100 | 24000 | 2.51 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 1.6A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Vgs(th) (Max) @ Id | 2.5V @ 25µA |
| Gate Charge (Qg) @ Vgs | 2.5nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 25V |
| Power - Max | 1.3W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | Micro3™/SOT-23 |
 |
 |
 |
 |
 |
 |