Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 185 mOhm @ 1.6A, 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 2.6A |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 25V |
| Power - Max | 2.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 249ЛП10Р | 1 | 2 310.00 руб. | |
| 293D336X9016C2TE3 (VISHAY) | 5200 | 41.56 руб. | |
| BZV55-C4V7 (NXP) | 7094 | 2.10 руб. | |
|
IRFL4315 150V Single N-channel HexFET Power MOSFET inA SOT-223 Package
Производитель:
|
||
 |
 |
 |
 |
 |
 |
