Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 95A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 206A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 200nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 7360pF @ 25V |
| Power - Max | 300W |
| Тип монтажа | Выводной |
| Корпус (размер) | Super-220™-3 (Straight Leads) |
| Корпус | SUPER-220™ (TO-273AA) |
|
IRFBA1404P Дискретные сигналы Power MOSFET (Vdss=40V, Rds (on) =3.7mohm, Id=206A)
Производитель:
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