Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 5.5A, 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 9.2A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1400pF @ 25V |
| Power - Max | 170W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SIHG20N50C-E3 (VISHAY) | 2000 | 165.31 руб. | |
| SPP20N60C3 (INFINEON) | 144 | 247.97 руб. | |
|
IRFB9N60A N-канальные транзисторные модули Power MOSFET (Vdss=600V, Rds (on) =0.75ohm, Id=9.2A)
Производитель:
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