Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.1A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 6.9A |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 61nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3180pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
|
IRF7473 Дискретные сигналы Power Mosfet
Производитель:
|
||
 |
 |
 |
 |
 |
 |
