Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 3.3A, 10V |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 600pF @ 25V |
| Power - Max | 74W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
|
IRF730A MOSFET HEXFET® Power MOSFET
Производитель:
|
||
 |
 |
 |
 |
 |
 |
