Параметр |
Значение |
|---|---|
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 150µA |
| Current - Continuous Drain (Id) @ 25° C | 10.3A |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 10.3A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Тип монтажа | Поверхностный |
| Power - Max | 2.8W |
| Input Capacitance (Ciss) @ Vds | 2210pF @ 25V |
| Корпус (размер) | DirectFET™ Isometric MN |
| Корпус | DIRECTFET™ MN |
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