Параметр |
Значение |
|---|---|
| Корпус | 8-SO |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Тип монтажа | Поверхностный |
| Power - Max | 2.5W |
| Input Capacitance (Ciss) @ Vds | 1280pF @ 25V |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Drain to Source Voltage (Vdss) | 150V |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.3A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
|
IRF6216 Дискретные сигналы 150V Single P-channel HexFET Power MOSFET inA SO-8 Package
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