Параметр |
Значение |
|---|---|
| Rds On (Max) @ Id, Vgs | 112 mOhm @ 3.4A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Тип монтажа | Поверхностный |
| Power - Max | 2W |
| Input Capacitance (Ciss) @ Vds | 1110pF @ 25V |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 3.4A |
| Drain to Source Voltage (Vdss) | 40V |
| Корпус (размер) | Micro6™(TSOP-6) |
| Корпус | Micro6™(TSOP-6) |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| LQW18AN33NG00D (MURATA) | 2560 | 19.54 руб. | |
| SN74LVC1G08DCKR (TEXAS INSTRUMENTS) | 2400 | 15.35 руб. | |
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