Параметр |
Значение |
|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 2.2K |
| Resistor - Emitter Base (R2) (Ohms) | 2.2K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| Power - Max | 300mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-TSSOP, SC-88, SOT-363 |
| Корпус | SC-88 |
|
PUMD20 Low VCE(sat) Bipolar Transistors NPN / PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
Производитель:
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