Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 4.7K |
| Resistor - Emitter Base (R2) (Ohms) | 47K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| Power - Max | 300mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SOT-666 |
| Корпус | SOT-666 |
|
PEMH13 NPN / NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = 47 kOHM
Производитель:
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