PBLS2001S
Технические характеристики PBLS2001S
Параметр |
Значение |
|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 50V, 20V |
| Current - Collector (Ic) (Max) | 100mA, 3A |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Resistor - Base (R1) (Ohms) | 2.2K |
| Resistor - Emitter Base (R2) (Ohms) | 2.2K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V / 150 @ 2A, 2V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 1µA, 100nA |
| Frequency - Transition | 100MHz |
| Power - Max | 1.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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