Параметр |
Значение |
|---|---|
| Корпус | NS-B1 |
| Корпус (размер) | NS-B1 |
| Тип монтажа | Выводной |
| Frequency - Transition | 150MHz |
| Power - Max | 300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2mA, 10V |
| Current - Collector Cutoff (Max) | 1µA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
|
2SC3311A Универсальные биполярные транзисторы Silicon NPN epitaxial planer type
Производитель:
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