Параметр |
Значение |
|---|---|
| Корпус | LSTM |
| Корпус (размер) | TO-92-3 (Long Body), TO-226 |
| Тип монтажа | Выводной |
| Frequency - Transition | 120MHz |
| Power - Max | 900mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 800mA |
| Transistor Type | PNP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| 2SA1020 | 1 | 46.46 руб. | |
|
2SA965 Transistor Silicon Pnp Epitaxial Type (pct Process)
Производитель:
|
||
 |
 |
 |
 |
 |
 |
