Параметр |
Значение |
|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 50mA |
| Transistor Type | NPN - Pre-Biased |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Resistor - Base (R1) (Ohms) | 10K |
| Resistor - Emitter Base (R2) (Ohms) | 10K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Frequency - Transition | 250MHz |
| Power - Max | 300mW |
| Тип монтажа | Выводной |
| Корпус (размер) | SC-72-3, SPT |
| Корпус | SPT |
|
PDTC114ES Npn Resistor-equipped Transistor
Производитель:
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