Параметр |
Значение |
|---|---|
| Корпус | PG-SOT23-3 |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Тип монтажа | Поверхностный |
| Power - Max | 200mW |
| Frequency - Transition | 130MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Resistor - Emitter Base (R2) (Ohms) | 10K |
| Resistor - Base (R1) (Ohms) | 10K |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Transistor Type | NPN - Pre-Biased |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
|
BCR133S PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
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