Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | STripFET™ |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 1.5A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 2.5A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 850pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BZV55C12/T1 (NXP) | 55984 | 1.64 руб. | |
| SG3525ANG (ONS) | 330 | 135.06 руб. | |
|
STN3PF06 MOSFET P-channel 60 V - 0.20 ? - 2.5 A - SOT-223 STripFET™ II Power MOSFET
Производитель:
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