Параметр |
Значение |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.3A, 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 2.1A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 78nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| Power - Max | 35W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 Full Pack, Isolated |
| Корпус | TO-220-3 |
|
IRFIBE30G MOSFET HEXFET® Power MOSFET
Производитель:
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