Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 26A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 49A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 58W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 Full Pack |
| Корпус | TO-220AB Full-Pak |
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| GF1G | 1 |
|
|
| IRF7319PBF | 40 |
|
|
| IRLML2402 (HOTTECH) | 336000 | 5.90 руб. | |
|
IRFI1010N N-канальные транзисторные модули Power MOSFET (Vdss=55V, Rds (on) =0.012ohm, Id=49A)
Производитель:
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