Наименование |
Кол-во
|
Цена
|
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|---|---|---|---|
| IRFBG30PBF | 1600 | 111.54 руб. | |
Параметр |
Значение |
|---|---|
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 1.9A, 10V |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 3.1A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 980pF @ 25V |
| Power - Max | 125W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
|
IRFBG30PBF MOSFET HEXFET® Power MOSFET
Производитель:
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