Параметр |
Значение |
|---|---|
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 11A, 4.5V |
| Drain to Source Voltage (Vdss) | 14V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 125nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 8075pF @ 10V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
|
IRF7220 HEXFETand#174; Power MOSFET
Производитель:
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